Power Field-Effect Transistor, 90A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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Ixys IXTP90N055T technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 8.8mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 20ns |
| Input Capacitance | 2.5nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 176W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 176W |
| Rds On Max | 8.8mR |
| RoHS Compliant | Yes |
| Series | TrenchT2™ |
| Turn-Off Delay Time | 40ns |
| RoHS | Compliant |
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