IXTP90N055T

Name: IXTP90N055T Ixys
Brand: Ixys
SKU: IXTP90N055T

Power Field-Effect Transistor, 90A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

PackageTO-220AB

MountingThrough Hole

PolarityN-CHANNEL

Power176W

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Ixys IXTP90N055T technical specifications.

Package/Case	TO-220AB
Continuous Drain Current (ID)	90A
Drain to Source Breakdown Voltage	55V
Drain to Source Resistance	8.8mR
Drain to Source Voltage (Vdss)	55V
Fall Time	20ns
Input Capacitance	2.5nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	176W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	176W
Rds On Max	8.8mR
RoHS Compliant	Yes
Series	TrenchT2™
Turn-Off Delay Time	40ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.