The IXTQ26N60P is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 460W and a drain to source breakdown voltage of 600V. The device is packaged in a through-hole package and is compliant with RoHS regulations. It features a continuous drain current of 26A and a gate to source voltage of 30V.
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Ixys IXTQ26N60P technical specifications.
| Continuous Drain Current (ID) | 26A |
| Current Rating | 26A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.15nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 460W |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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