Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN
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| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance | 10.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540W |
| Mount | Through Hole |
| Nominal Vgs | 2.5V |
| Packaging | Rail/Tube |
| Power Dissipation | 540W |
| Rds On Max | 240mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Linear L2™ |
| Threshold Voltage | 2.5V |
| RoHS | Compliant |
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