The Ixys IXTQ450P2 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 300W and a drain to source breakdown voltage of 500V. The device is packaged in a TO-3P, 3 PIN plastic package and is available in a rail/Tube packaging option. The IXTQ450P2 is RoHS compliant and features a maximum drain to source resistance of 330mR.
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Ixys IXTQ450P2 technical specifications.
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 330mR |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.53nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 330mR |
| RoHS Compliant | Yes |
| Series | PolarP2™ |
| RoHS | Compliant |
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