Power Field-Effect Transistor, 50A I(D), 250V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN
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Ixys IXTQ50N25T technical specifications.
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 250V |
| Input Capacitance | 4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 400W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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