N-channel power MOSFET featuring 4500V drain-source breakdown voltage and 200mA continuous drain current. This silicon, metal-oxide semiconductor FET offers a 750 Ohm Rds On and operates with a 20V gate-source voltage. Designed for surface mounting in a TO-268 package, it boasts a maximum power dissipation of 113W and a maximum operating temperature of 150°C. Included technical specifications detail a fall time of 143ns and a turn-off delay time of 28ns.
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power113W
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Technical Specifications
Ixys IXTT02N450HV technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 4.5kV |
| Drain to Source Resistance | 750R |
| Drain to Source Voltage (Vdss) | 4.5kV |
| Fall Time | 143ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 256pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 113W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 113W |
| Rds On Max | 750R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTT02N450HV Datasheet
Download the complete datasheet for Ixys IXTT02N450HV to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.