The Ixys IXTT170N10P is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of 100V and a continuous drain current of 170A. The device has a maximum power dissipation of 715W and a gate to source voltage of 20V. The Ixys IXTT170N10P is lead-free and RoHS compliant, packaged in a TO-268 surface mount package.
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power714W
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Technical Specifications
Ixys IXTT170N10P technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 170A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 715W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 714W |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | Polar™ |
| Turn-Off Delay Time | 90ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTT170N10P Datasheet
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