Ixys
IXTT30N60P
Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
PackageTO-268
Current Rating30A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTT30N60P technical specifications.
General
Package/Case
TO-268
Continuous Drain Current (ID)
30A
Current Rating
30A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
600V
Fall Time
25ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
5.05nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
540W
Mount
Surface Mount
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
540W
Rds On Max
240mR
RoHS Compliant
Yes
Series
PolarHV™
Turn-Off Delay Time
80ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Ixys IXTT30N60P Datasheet
Download the complete datasheet for Ixys IXTT30N60P to view detailed technical specifications.
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