Ixys
IXTT360N055T2
Power Field-Effect Transistor, 360A I(D), 55V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
Power Field-Effect Transistor, 360A I(D), 55V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
PackageTO-268
MountingSurface Mount
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Technical Specifications
Ixys IXTT360N055T2 technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 360A |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance | 20nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 935W |
| Mount | Surface Mount |
| Rds On Max | 2.4mR |
| RoHS Compliant | Yes |
| Series | TrenchT2™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTT360N055T2 Datasheet
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