N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 36A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.17 ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 540W. Designed for surface mounting in a TO-268 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 21ns fall time and a 75ns turn-off delay time.
PackageTO-268
Current Rating36A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTT36N50P technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 540W |
| Rds On Max | 170mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTT36N50P Datasheet
Download the complete datasheet for Ixys IXTT36N50P to view detailed technical specifications.
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