
The Ixys IXTT74N20P is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of 200V and a continuous drain current of 74A. The device has a low on-resistance of 34mR and a maximum power dissipation of 480W. It is packaged in a TO-268 case and is suitable for surface mount applications.
Sign in to ask questions about the Ixys IXTT74N20P datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXTT74N20P technical specifications.
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 74A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 34MR |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 400W |
| Rds On Max | 34mR |
| RoHS Compliant | Yes |
| Series | PolarHT™ |
| Turn-Off Delay Time | 60ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTT74N20P to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
