The IXTT8P50 is a P-channel MOSFET with a maximum drain-to-source breakdown voltage of 500V and a continuous drain current of 8A. It features a drain-to-source resistance of 1.2 ohms and a maximum power dissipation of 180W. The device is packaged in a TO-268 case and is suitable for surface mount applications. The operating temperature range is from -55°C to 150°C, and the device is RoHS compliant.
PackageTO-268
MountingSurface Mount
PolarityP-CHANNEL
Power180W
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Technical Specifications
Ixys IXTT8P50 technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 180W |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTT8P50 Datasheet
Download the complete datasheet for Ixys IXTT8P50 to view detailed technical specifications.
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