P-channel silicon MOSFET, 600V drain-source voltage, 32A continuous drain current, and 350mΩ maximum Rds(on). Features 11.1nF input capacitance and 890W maximum power dissipation. Operates from -55°C to 150°C. Through-hole mounting in a TO-247-3 package. RoHS compliant.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXTX32P60P technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance | 11.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Rds On Max | 350mR |
| RoHS Compliant | Yes |
| Series | PolarP™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTX32P60P Datasheet
Download the complete datasheet for Ixys IXTX32P60P to view detailed technical specifications.
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