P-channel silicon MOSFET, 600V drain-source voltage, 32A continuous drain current, and 350mΩ maximum Rds(on). Features 11.1nF input capacitance and 890W maximum power dissipation. Operates from -55°C to 150°C. Through-hole mounting in a TO-247-3 package. RoHS compliant.
PackageTO-247-3
MountingThrough Hole
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Ixys IXTX32P60P datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Ixys IXTX32P60P technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance | 11.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Rds On Max | 350mR |
| RoHS Compliant | Yes |
| Series | PolarP™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTX32P60P Datasheet
Download the complete datasheet for Ixys IXTX32P60P to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
