Ixys
IXTX46N50L
Power Field-Effect Transistor, 46A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN
Power Field-Effect Transistor, 46A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power700W
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Technical Specifications
Ixys IXTX46N50L technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 160mR |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 80ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTX46N50L Datasheet
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