High-voltage N-channel power MOSFET designed for demanding applications. Features a 2.5kV drain-to-source breakdown voltage and a continuous drain current of 5A. Offers a low on-resistance of 8.8 Ohms at a 5V gate-to-source voltage. This through-hole component, housed in a TO-247-3 package, boasts a maximum power dissipation of 960W and operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with a fall time of 44ns and turn-off delay of 90ns.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power960W
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Technical Specifications
Ixys IXTX5N250 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 2.5kV |
| Drain to Source Resistance | 8.8R |
| Drain to Source Voltage (Vdss) | 2.5kV |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 5V |
| Input Capacitance | 8.56nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 960W |
| Rds On Max | 8.8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 90ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTX5N250 Datasheet
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