Ixys
IXTY02N50D
Power Field-Effect Transistor, 0.2A I(D), 500V, 30ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
Power Field-Effect Transistor, 0.2A I(D), 500V, 30ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Ixys IXTY02N50D technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 30R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 120pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 30R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTY02N50D Datasheet
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