Ixys
IXTY02N50D
Power Field-Effect Transistor, 0.2A I(D), 500V, 30ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Ixys IXTY02N50D technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
200mA
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
30R
Drain to Source Voltage (Vdss)
500V
Fall Time
4ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
120pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1.1W
Rds On Max
30R
RoHS Compliant
Yes
Turn-Off Delay Time
28ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTY02N50D Datasheet
Download the complete datasheet for Ixys IXTY02N50D to view detailed technical specifications.
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