N-Channel Power MOSFET featuring a 500V drain-source voltage and 1.6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a maximum on-resistance of 2.3 Ohms and a maximum power dissipation of 100W. Designed for surface mounting, it utilizes a TO-252 package and operates within a temperature range of -55°C to 150°C. Input capacitance is rated at 645pF, and the component is lead-free and RoHS compliant.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Ixys IXTY1R6N50D2 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
1.6A
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
2.3MR
Input Capacitance
645pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Surface Mount
Packaging
Rail/Tube
Rds On Max
2.3R
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Ixys IXTY1R6N50D2 Datasheet
Download the complete datasheet for Ixys IXTY1R6N50D2 to view detailed technical specifications.
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