N-Channel Power MOSFET featuring a 500V drain-source voltage and 1.6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a maximum on-resistance of 2.3 Ohms and a maximum power dissipation of 100W. Designed for surface mounting, it utilizes a TO-252 package and operates within a temperature range of -55°C to 150°C. Input capacitance is rated at 645pF, and the component is lead-free and RoHS compliant.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Ixys IXTY1R6N50D2 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 2.3MR |
| Input Capacitance | 645pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Rds On Max | 2.3R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTY1R6N50D2 Datasheet
Download the complete datasheet for Ixys IXTY1R6N50D2 to view detailed technical specifications.
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