Ixys
IXTZ550N055T2
Power Field-Effect Transistor, 550A I(D), 55V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, CASE DE475, 6 PIN
Power Field-Effect Transistor, 550A I(D), 55V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, CASE DE475, 6 PIN
Resistance0.001R
MountingSurface Mount
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Technical Specifications
Ixys IXTZ550N055T2 technical specifications.
General
| Continuous Drain Current (ID) | 550A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 1mR |
| Input Capacitance | 40nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Surface Mount |
| Rds On Max | 1mR |
| Resistance | 0.001R |
| RoHS Compliant | Yes |
| Series | FRFET®, SupreMOS® |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTZ550N055T2 Datasheet
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