The Ixys IXXH50N60B3 is a 600V insulated gate bipolar transistor with a maximum collector current of 120A and a maximum power dissipation of 600W. It is packaged in a TO-247-3 case and is available in quantities of 30. The device is RoHS compliant and suitable for use in a variety of applications. The transistor is designed for use in high-power switching circuits and is suitable for use in industrial and commercial environments.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXXH50N60B3 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 1.8V |
| Input Type | STANDARD |
| Max Collector Current | 120A |
| Max Power Dissipation | 600W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | GenX3™, XPT™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXXH50N60B3 Datasheet
Download the complete datasheet for Ixys IXXH50N60B3 to view detailed technical specifications.
No datasheet is available for this part.