The IXXH50N60B3D1 is a 600V insulated gate bipolar transistor with a maximum collector current of 120A. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 175°C and has a maximum power dissipation of 600W. The IXXH50N60B3D1 is compliant with RoHS regulations and is available in quantities of 30 per rail or tube packaging.
PackageTO-247-3
MountingThrough Hole
Power600W
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Technical Specifications
Ixys IXXH50N60B3D1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.55V |
| Collector-emitter Voltage-Max | 1.8V |
| Input Type | STANDARD |
| Max Collector Current | 120A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 600W |
| Reverse Recovery Time | 25ns |
| RoHS Compliant | Yes |
| Series | GenX3™, XPT™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXXH50N60B3D1 Datasheet
Download the complete datasheet for Ixys IXXH50N60B3D1 to view detailed technical specifications.
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