High-performance Insulated Gate Bipolar Transistor (IGBT) featuring a 650V Collector-Emitter Breakdown Voltage and a maximum collector current of 215A. This device offers a low Collector-Emitter Saturation Voltage of 2.1V and a maximum power dissipation of 750W. Designed for chassis mounting within a SOT-227-4 package, it operates across a wide temperature range from -55°C to 175°C. The IGBT includes standard input with an input capacitance of 3.65nF and is RoHS compliant.
PackageSOT-227-4
MountingChassis Mount
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Technical Specifications
Ixys IXXN110N65B4H1 technical specifications.
General
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector-emitter Voltage-Max | 2.1V |
| Input | Standard |
| Input Capacitance | 3.65nF |
| Max Collector Current | 215A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750W |
| Mount | Chassis Mount |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | XPT™, GenX4™ |
| Weight | 1.058219oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXXN110N65B4H1 Datasheet
Download the complete datasheet for Ixys IXXN110N65B4H1 to view detailed technical specifications.
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