The IXXR100N60B3H1 is a 600V insulated gate bipolar transistor with a maximum collector current of 145A. It features a TO-247-3 package and is designed for high-power applications. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The IGBT has a maximum power dissipation of 400W and a reverse recovery time of 140ns.
PackageTO-247-3
MountingThrough Hole
Power400W
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Technical Specifications
Ixys IXXR100N60B3H1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector-emitter Voltage-Max | 1.8V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 145A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 400W |
| Reverse Recovery Time | 140ns |
| RoHS Compliant | Yes |
| Series | GenX3™, XPT™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXXR100N60B3H1 Datasheet
Download the complete datasheet for Ixys IXXR100N60B3H1 to view detailed technical specifications.
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