High-performance Insulated Gate Bipolar Transistor (IGBT) featuring a 650V collector-emitter breakdown voltage and a maximum collector current of 166A. This device offers a low collector-emitter saturation voltage of 1.85V and a maximum power dissipation of 600W. Designed for stud or chassis mounting within a SOT-227-4 package, it operates across a wide temperature range from -55°C to 175°C. The IGBT includes standard input with a 4.98nF input capacitance.
PackageSOT-227-4
MountingStud, Chassis
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Technical Specifications
Ixys IXYN100N65C3H1 technical specifications.
General
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.85V |
| Collector-emitter Voltage-Max | 2.3V |
| Input | Standard |
| Input Capacitance | 4.98nF |
| Max Collector Current | 166A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Stud, Chassis |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Series | XPT™, GenX3™ |
| Weight | 1.340411oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXYN100N65C3H1 Datasheet
Download the complete datasheet for Ixys IXYN100N65C3H1 to view detailed technical specifications.
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