N-Channel Insulated Gate Bipolar Transistor (IGBT) with 1200V Collector-Emitter Breakdown Voltage and 105A Max Collector Current. Features a 2.75V Collector-Emitter Saturation Voltage and 500W Max Power Dissipation. Designed for chassis, surface, or screw mounting in a SOT-227-4 package. Operates from -55°C to 150°C, with 29ns turn-on and 192ns turn-off delay times. This RoHS compliant component offers lead-free construction.
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| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.75V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.2V |
| Height | 9.6mm |
| Input | Standard |
| Input Capacitance | 4.06nF |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Collector Current | 105A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Chassis Mount, Surface Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | XPT™, GenX3™ |
| Turn-Off Delay Time | 192ns |
| Turn-On Delay Time | 29ns |
| Weight | 1.340411oz |
| Width | 25.07mm |
| RoHS | Compliant |
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