N-Channel Insulated Gate Bipolar Transistor (IGBT) with 1200V Collector-Emitter Breakdown Voltage and 105A Max Collector Current. Features a 2.75V Collector-Emitter Saturation Voltage and 500W Max Power Dissipation. Designed for chassis, surface, or screw mounting in a SOT-227-4 package. Operates from -55°C to 150°C, with 29ns turn-on and 192ns turn-off delay times. This RoHS compliant component offers lead-free construction.
PackageSOT-227-4
MountingChassis Mount, Surface Mount, Screw
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Technical Specifications
Ixys IXYN82N120C3H1 technical specifications.
General
Package/Case
SOT-227-4
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.75V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
3.2V
Height
9.6mm
Input
Standard
Input Capacitance
4.06nF
Lead Free
Lead Free
Length
38.23mm
Max Collector Current
105A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500W
Mount
Chassis Mount, Surface Mount, Screw
NTC Thermistor
No
Package Quantity
10
Packaging
Rail/Tube
Radiation Hardening
No
RoHS Compliant
Yes
Series
XPT™, GenX3™
Turn-Off Delay Time
192ns
Turn-On Delay Time
29ns
Weight
1.340411oz
Width
25.07mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXYN82N120C3H1 Datasheet
Download the complete datasheet for Ixys IXYN82N120C3H1 to view detailed technical specifications.
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