The IXYP10N65C3 is an insulated gate bipolar transistor from Ixys, featuring a collector-emitter breakdown voltage of 650V and a maximum collector current of 30A. It has a maximum power dissipation of 160W and is packaged in a TO-220-3 case for through-hole mounting. This IGBT is suitable for high-power applications and is available in quantities of 50 per rail or tube packaging.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Ixys IXYP10N65C3 technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 30A |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Series | GenX3™, XPT™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXYP10N65C3 Datasheet
Download the complete datasheet for Ixys IXYP10N65C3 to view detailed technical specifications.
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