The IXYP15N65C3D1M is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 650V and a maximum collector current of 16A. It features a TO-220-3 package and is designed for through-hole mounting. The device operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 48W.
PackageTO-220-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Ixys IXYP15N65C3D1M technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.96V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 16A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 30ns |
| Series | GenX3™, XPT™ |
| Weight | 0.211644oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXYP15N65C3D1M Datasheet
Download the complete datasheet for Ixys IXYP15N65C3D1M to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.