RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
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| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 500V |
| Max Frequency | 175MHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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