The Ixys MID400-12E4 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 420A. It has a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. The device is packaged in a module format and is RoHS compliant. It is suitable for use in high-power applications where a high current and voltage are required.
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Ixys MID400-12E4 technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.8V |
| Input | Standard |
| Input Capacitance | 17nF |
| Lead Free | Lead Free |
| Max Collector Current | 420A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.7kW |
| Mount | Chassis Mount |
| NTC Thermistor | No |
| Package Quantity | 2 |
| Packaging | Box |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 680ns |
| Turn-On Delay Time | 170ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys MID400-12E4 to view detailed technical specifications.
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