
Power Field-Effect Transistor, 190A I(D), 100V, 0.0022ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOPLUS-DIL, 24 PIN
Ixys MTI145WX100GD-SMD technical specifications.
| Number of Terminals | 24 |
| Terminal Position | DUAL |
| Number of Elements | 6 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
No datasheet is available for this part.