The Ixys VII50-12P1 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 49A. It is packaged in a module with a chassis mount and screw, and is designed to operate within a temperature range of -40°C to 150°C. The device is RoHS compliant and has a maximum power dissipation of 208W.
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Ixys VII50-12P1 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.7V |
| Input | Standard |
| Input Capacitance | 1.65nF |
| Max Collector Current | 49A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 208W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | Yes |
| Packaging | Box |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys VII50-12P1 Datasheet
Download the complete datasheet for Ixys VII50-12P1 to view detailed technical specifications.
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