Ixys
VMM650-01F
Power Field-Effect Transistor, 680A I(D), 100V, 0.0018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
MountingChassis Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys VMM650-01F technical specifications.
General
Continuous Drain Current (ID)
680A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
2.2mR
Drain to Source Voltage (Vdss)
100V
Fall Time
250ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Mount
Chassis Mount
Package Quantity
2
Packaging
Bulk
Polarity
N-CHANNEL
Rds On Max
2.2mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
400ns
Compliance
RoHS
Compliant
Datasheet
Ixys VMM650-01F Datasheet
Download the complete datasheet for Ixys VMM650-01F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.