Ixys
VMM90-09F
Power Field-Effect Transistor, 85A I(D), 900V, 0.076ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
PackageModule
MountingChassis Mount, Screw
Quick Jump:
Technical Specifications
Ixys VMM90-09F technical specifications.
General
Package/Case
Module
Continuous Drain Current (ID)
85A
Drain to Source Voltage (Vdss)
900V
Drain-source On Resistance-Max
76MR
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Mount
Chassis Mount, Screw
Number of Elements
2
Package Quantity
2
Packaging
Bulk
Radiation Hardening
No
Rds On Max
76mR
RoHS Compliant
Yes
Series
HiPerFET™
Compliance
RoHS
Compliant
Datasheet
Ixys VMM90-09F Datasheet
Download the complete datasheet for Ixys VMM90-09F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
