Power Field-Effect Transistor, 85A I(D), 900V, 0.076ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Package/Case | Module |
| Continuous Drain Current (ID) | 85A |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 76MR |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount, Screw |
| Number of Elements | 2 |
| Package Quantity | 2 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 76mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| RoHS | Compliant |
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