
The VMO650-01F is a high-power N-channel transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a maximum power dissipation of 2.5kW and a drain to source breakdown voltage of 100V. The device features a lead-free construction and is RoHS compliant. It is available in a module package with a package quantity of 2, suitable for chassis mount applications.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Ixys VMO650-01F datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | Module |
| Continuous Drain Current (ID) | 690A |
| Current Rating | 690A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 1.8mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 200ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 59nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.5kW |
| Mount | Chassis Mount |
| Package Quantity | 2 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5kW |
| Rds On Max | 1.8mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 800ns |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
Download the complete datasheet for Ixys VMO650-01F to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
