Power Field-Effect Transistor, 210A I(D), 100V, 0.0052ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-24
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Ixys VWM200-01P technical specifications.
| Continuous Drain Current (ID) | 210A |
| Drain to Source Voltage (Vdss) | 100V |
| FET Type | 6 N-Channel |
| Mount | Through Hole |
| Package Quantity | 5 |
| Packaging | Bulk |
| Rds On Max | 5.2mR |
| RoHS Compliant | No |
| RoHS | Not Compliant |
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