MMBTA06 is an NPN small-signal transistor in a SOT-23 plastic package for switching and amplifier applications. It is rated for 80 V collector-base voltage, 80 V collector-emitter voltage, 4 V emitter-base voltage, 500 mA collector current, and 300 mW collector power dissipation. DC current gain is 100 to 400 at VCE = 1 V and IC = 10 mA, with a minimum gain of 100 at IC = 100 mA. The device specifies 0.25 V maximum collector-emitter saturation voltage and 1.2 V maximum base-emitter saturation voltage at IC = 100 mA and IB = 10 mA. Transition frequency is 100 MHz at VCE = 2 V and IC = 10 mA, and the junction temperature rating is 150 °C.
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Jiangsu Changjiang Electronics Technology MMBTA06 technical specifications.
| Transistor Type | NPN |
| Mounting Package | SOT-23 |
| Collector-Base Voltage | 80V |
| Collector-Emitter Voltage | 80V |
| Emitter-Base Voltage | 4V |
| Collector Current | 500mA |
| Collector Power Dissipation | 300mW |
| Thermal Resistance Junction-to-Ambient | 416°C/W |
| Junction Temperature | 150°C |
| Storage Temperature | -55 to +150°C |
| Collector Cut-off Current | 0.1µA |
| Collector-Emitter Cut-off Current | 1µA |
| Emitter Cut-off Current | 0.1µA |
| DC Current Gain | 100 to 400 at VCE=1V, IC=10mA |
| DC Current Gain | 100 min at VCE=1V, IC=100mA |
| Collector-Emitter Saturation Voltage | 0.25 maxV |
| Base-Emitter Saturation Voltage | 1.2 maxV |
| Transition Frequency | 100MHz |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.