This N-channel enhancement-mode power MOSFET is rated for 100 V drain-source voltage and 150 A continuous drain current at 25 °C. It is supplied in a TO-220C package and provides a maximum 4.2 mΩ on-resistance at 10 V gate drive with typical total gate charge of 110 nC. The device is 100% avalanche tested, supports fast switching, and is intended for isolated DC/DC converters, synchronous rectification, automotive equipment, and UPS systems. Junction operation is specified from -55 °C to 150 °C, with 208 W power dissipation and 0.60 °C/W thermal resistance from junction to case.
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Jilin Sino-Microelectronics MC150N10A technical specifications.
| Drain-Source Voltage | 100V |
| Continuous Drain Current @ 25C | 150A |
| Continuous Drain Current @ 100C | 95A |
| Pulsed Drain Current | 600A |
| Gate-Source Voltage | +20/-12V |
| Single Pulsed Avalanche Energy | 378mJ |
| Power Dissipation | 208W |
| Operating Junction Temperature | -55 to 150°C |
| Drain-Source On-Resistance Max @ Vgs=10V | 4.2mΩ |
| Drain-Source On-Resistance Max @ Vgs=4.5V | 6.0mΩ |
| Gate Threshold Voltage | 1.2 to 2.5V |
| Total Gate Charge | 110nC |
| Input Capacitance | 6680pF |
| Output Capacitance | 1960pF |
| Reverse Transfer Capacitance | 78pF |
| Thermal Resistance Junction-to-Case | 0.60°C/W |
| Thermal Resistance Junction-to-Ambient | 62.5°C/W |
| RoHS | Yes |
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