PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 65V collector-emitter voltage, 0.1A maximum collector current, and 200 minimum DC current gain. Housed in a 3-pin TO-92 plastic package with formed leads for through-hole mounting. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 625mW and a typical transition frequency of 150MHz.
PackageTO-92
MountingThrough Hole
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Technical Specifications
KEC Group BC556B technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92
Package Description
Plastic Header Style Package
Lead Shape
Formed
Pin Count
3
PCB
3
Package Length (mm)
4.8(Max)
Package Width (mm)
3.7(Max)
Package Height (mm)
4.7(Max)
Package Material
Plastic
Mounting
Through Hole
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
80V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
65V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
625mW
Minimum DC Current Gain
200@2mA@5V
Maximum Transition Frequency
150(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
7916F
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
KEC Group BC556B Datasheet
Download the complete datasheet for KEC Group BC556B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.