PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 45V and a maximum DC collector current of 0.1A. This single-element transistor is housed in a 3-pin TO-92 plastic package with through-hole mounting. Key specifications include a minimum DC current gain of 200 at 2mA/5V and a typical transition frequency of 300MHz, operating within a temperature range of -55°C to 150°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
KEC Group BC560B technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92
Package Description
Plastic Header Style Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
4.8(Max)
Package Width (mm)
3.7(Max)
Package Height (mm)
4.7(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Through Hole
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
50V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
45V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
625mW
Minimum DC Current Gain
200@2mA@5V
Maximum Transition Frequency
300(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
7916F
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
KEC Group BC560B Datasheet
Download the complete datasheet for KEC Group BC560B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.