NPN Bipolar Junction Transistor (BJT) for power applications, featuring a 400V collector-emitter voltage and 4A continuous collector current. This single-element transistor boasts a maximum power dissipation of 75000mW and a minimum DC current gain of 18 at 1A and 5V. Designed for through-hole mounting, it is housed in a TO-220AB package with 3 pins and a tab, offering a wide operating temperature range from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
KEC Group MJE13005R technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
8.6(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
700V
Maximum Emitter Base Voltage
9V
Maximum Collector-Emitter Voltage
400V
Maximum DC Collector Current
4A
Maximum Power Dissipation
75000mW
Minimum DC Current Gain
18@1A@5V
Maximum Transition Frequency
4(Min)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
7916F
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
KEC Group MJE13005R Datasheet
Download the complete datasheet for KEC Group MJE13005R to view detailed technical specifications.
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