BC847C

Small-signal NPN silicon AF transistor for input stages and driver applications. It supports up to 45 V collector-emitter voltage and 100 mA DC collector current, with total power dissipation rated at 330 mW at a 71 °C soldering-point temperature. The C gain group provides DC current gain from 420 to 800 at IC = 2 mA and VCE = 5 V, and the device is housed in a SOT-23 package. Typical transition frequency is 250 MHz, with typical collector-base capacitance of 3 pF and emitter-base capacitance of 8 pF.