3-pin IR phototransistor with NPN polarity, designed for through-hole mounting. Features a flat lens, side-viewing orientation, and two channels per chip. Operates within a temperature range of -40°C to 85°C, with a maximum collector current of 4.5mA and a maximum light current of 960µA. Maximum emitter-collector voltage is 5V, and maximum collector-emitter voltage is 30V. Exhibits a maximum dark current of 100nA and a maximum power dissipation of 100mW.
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Lite-On LTR-5576D technical specifications.
General
Basic Package Type
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
5
Package Width (mm)
3
Package Height (mm)
5
Mounting
Through Hole
Phototransistor Type
Phototransistor
Type
IR Chip
Polarity
NPN
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Viewing Orientation
Side View
Maximum Light Current
960uA
Lens Shape Type
Flat
Number of Channels per Chip
2
Fabrication Technology
NPN Transistor
Maximum Emitter-Collector Voltage
5V
Maximum Collector-Emitter Voltage
30V
Maximum Dark Current
100nA
Maximum Collector Current
4.5mA
Maximum Collector-Emitter Saturation Voltage
0.4V
Maximum Fall Time
18000(Typ)ns
Maximum Power Dissipation
100mW
Maximum Rise Time
15000(Typ)ns
Compliance
EU RoHS
Yes
HTS Code
8541402000
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Lite-On LTR-5576D Datasheet
Download the complete datasheet for Lite-On LTR-5576D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.