This is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 12V and a minimum breakdown voltage of 13.3V. The maximum breakdown voltage is 14.7V and the maximum non-repetitive peak reverse power dissipation is 200mA. The power dissipation is maximally 0.5W. It is packaged in a DO-216AA package type.
Sign in to ask questions about the Littelfuse 1PMT12AT1G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Littelfuse 1PMT12AT1G technical specifications.
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | DO-216AA |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 12 |
| Breakdown Voltage-Min | 13.3 |
| Non-rep Peak Rev Power Dis-Max | 200 |
| Breakdown Voltage-Max | 14.7 |
| Power Dissipation-Max | 0.5 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Littelfuse 1PMT12AT1G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.