
Dual common-cathode SiC Schottky rectifier for fast, low-loss switching: 1200 V rating, per‑leg IF(AV) 10 A (30 A at Tc=25°C), 72 A surge, Qc 62 nC, VF typ 1.48 V at 10 A, TJ up to 175°C; TO‑247‑3L.
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Littelfuse DCK20C1200HB technical specifications.
| Device type | Silicon Carbide (SiC) Schottky diode |
| Configuration | Dual, common cathode (2x) |
| Repetitive peak reverse voltage VRRM | 1200V |
| DC blocking voltage VDC | 1200V |
| Average forward current IF(AV) per leg at Tc=155°C | 10A |
| Continuous forward current per leg at Tc=135°C | 15.2A |
| Continuous forward current per leg at Tc=25°C | 30A |
| Non‑repetitive surge forward current IFSM (10 ms, sine, Tc=25°C) per leg | 72A |
| Repetitive peak forward current IFRM (0.1 Hz, 100 cycles, 10 ms) per leg | 56A |
| Total power dissipation Ptot at Tc=25°C per leg | 176W |
| Total power dissipation Ptot at Tc=150°C per leg | 29W |
| Junction temperature range Tvj | -55 to 175°C |
| Storage temperature range Tstg | -55 to 175°C |
| Forward voltage VF typ at IF=10 A, Tj=25°C | 1.48 (max 1.7)V |
| Forward voltage VF at IF=10 A, Tj=175°C | typ 2.0 (max 3.0)V |
| Reverse current IR at VR=1200 V, Tj=25°C | typ 1, max 100µA |
| Reverse current IR at VR=1200 V, Tj=175°C | typ 10, max 250µA |
| Total capacitive charge Qc at VR=800 V, Tj=25°C | 62nC |
| Capacitance C at VR=1 V, f=1 MHz | 575pF |
| Capacitance C at VR=400 V, f=1 MHz | 59pF |
| Capacitance C at VR=800 V, f=1 MHz | 42.5pF |
| Thermal resistance junction‑to‑case Rth(j‑c) per leg | 0.85K/W |
| MSL | 1 |
| AEC‑Q101 qualification | No |
| Pin count | 3 |
| Pinout (TO‑247‑3L) | 1=Anode, 2=Cathode, 3=Anode; Tab=Case |
| Mounting torque (M3 screw) | 0.7Nm |
| Package length D | 20.30 to 21.10mm |
| Package body thickness A | 4.83 to 5.21mm |
| Lead pitch e | 5.45 (typical, TO‑247‑3L)mm |
| RoHS | Compliant |
| Pb-free | Yes |
| REACH | SVHC declaration available from manufacturer |
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