Dual common-cathode SiC Schottky rectifier for fast, low-loss switching: 1200 V rating, per‑leg IF(AV) 10 A (30 A at Tc=25°C), 72 A surge, Qc 62 nC, VF typ 1.48 V at 10 A, TJ up to 175°C; TO‑247‑3L.
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Technical Specifications
Littelfuse DCK20C1200HB technical specifications.
General
Device type
Silicon Carbide (SiC) Schottky diode
Configuration
Dual, common cathode (2x)
Repetitive peak reverse voltage VRRM
1200V
DC blocking voltage VDC
1200V
Average forward current IF(AV) per leg at Tc=155°C
10A
Continuous forward current per leg at Tc=135°C
15.2A
Continuous forward current per leg at Tc=25°C
30A
Non‑repetitive surge forward current IFSM (10 ms, sine, Tc=25°C) per leg
72A
Repetitive peak forward current IFRM (0.1 Hz, 100 cycles, 10 ms) per leg
56A
Total power dissipation Ptot at Tc=25°C per leg
176W
Total power dissipation Ptot at Tc=150°C per leg
29W
Junction temperature range Tvj
-55 to 175°C
Storage temperature range Tstg
-55 to 175°C
Forward voltage VF typ at IF=10 A, Tj=25°C
1.48 (max 1.7)V
Forward voltage VF at IF=10 A, Tj=175°C
typ 2.0 (max 3.0)V
Reverse current IR at VR=1200 V, Tj=25°C
typ 1, max 100µA
Reverse current IR at VR=1200 V, Tj=175°C
typ 10, max 250µA
Total capacitive charge Qc at VR=800 V, Tj=25°C
62nC
Capacitance C at VR=1 V, f=1 MHz
575pF
Capacitance C at VR=400 V, f=1 MHz
59pF
Capacitance C at VR=800 V, f=1 MHz
42.5pF
Thermal resistance junction‑to‑case Rth(j‑c) per leg
0.85K/W
MSL
1
AEC‑Q101 qualification
No
Pin count
3
Pinout (TO‑247‑3L)
1=Anode, 2=Cathode, 3=Anode; Tab=Case
Mounting torque (M3 screw)
0.7Nm
Package length D
20.30 to 21.10mm
Package body thickness A
4.83 to 5.21mm
Lead pitch e
5.45 (typical, TO‑247‑3L)mm
Compliance
RoHS
Compliant
Pb-free
Yes
REACH
SVHC declaration available from manufacturer
Datasheet
Littelfuse DCK20C1200HB Datasheet
Download the complete datasheet for Littelfuse DCK20C1200HB to view detailed technical specifications.
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