This device is a high-voltage gate driver for high-side and low-side N-channel MOSFET or IGBT stages operating up to 600 V. Both output channels can source and sink 2 A, and the gate-drive supply range is 10 V to 20 V. It is 3.3 V logic compatible, includes undervoltage lockout on both channels, and is designed for tolerance to negative voltage transients with dV/dt immunity. Typical propagation delays are 113 ns turn-on and 100 ns turn-off, with matched delay performance for high-frequency switching applications. The family is documented in 14-pin DIP and 16-pin SOIC variants and is rated for operation from -40 °C to +125 °C ambient.
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| Driver topology | High-side and low-side gate driver |
| Maximum offset voltage | 600V |
| High-side floating channel absolute maximum rating | 700V |
| Peak source output current | 2A |
| Peak sink output current | 2A |
| Gate drive supply range | 10 to 20V |
| Logic compatibility | 3.3V |
| Turn-on propagation delay | 113 typns |
| Turn-off propagation delay | 100 typns |
| Propagation delay matching | 20 maxns |
| Allowable offset supply voltage transient | -50V/ns |
| Logic supply operating range | 3 to 20V |
| Operating ambient temperature | -40 to 125°C |
| High-side UVLO positive threshold | 8.4 typV |
| Low-side UVLO positive threshold | 8.4 typV |
