High-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Features a robust 1700V breakdown voltage and a continuous collector current rating of 42A. Optimized for efficient switching with low on-state voltage drop and fast switching speeds. Ideal for use in power supplies, motor drives, and industrial automation systems.
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| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
