N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 30A collector current (I(C)) and a 3000V collector-emitter breakdown voltage (V(BR)CES). Designed for high-voltage applications, this semiconductor component operates up to a maximum temperature of 150°C.
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Technical Specifications
Littelfuse IXBT12N300HV technical specifications.
General
| Max Operating Temperature | 150 |
Compliance
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Littelfuse IXBT12N300HV Datasheet
Download the complete datasheet for Littelfuse IXBT12N300HV to view detailed technical specifications.
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