N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1200V collector-emitter breakdown voltage and a 150A continuous collector current. This discrete semiconductor component offers a maximum operating temperature of 150°C. It is housed in a MINIBLOC-4 package with four terminals, all positioned at the upper side, and contains a single element.
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| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Terminal Position | UPPER |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
