N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1200V collector-emitter breakdown voltage and a 150A continuous collector current. This discrete semiconductor component offers a maximum operating temperature of 150°C. It is housed in a MINIBLOC-4 package with four terminals, all positioned at the upper side, and contains a single element.
Quick Jump:
Technical Specifications
Littelfuse IXDN75N120 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Terminal Position | UPPER |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Littelfuse IXDN75N120 Datasheet
Download the complete datasheet for Littelfuse IXDN75N120 to view detailed technical specifications.
No datasheet is available for this part.