This N-channel enhancement-mode power MOSFET is rated for 100 V drain-to-source voltage and 180 A continuous drain current at 25°C case temperature. It uses TrenchT2 HiperFET technology, is avalanche rated, and includes a fast intrinsic rectifier. Maximum on-resistance is 6 mΩ at 10 V gate drive and 50 A drain current, with gate threshold voltage specified from 2.0 V to 4.0 V. The device is specified for up to 480 W power dissipation and an operating junction temperature range of -55°C to +175°C. Typical dynamic characteristics include 185 nC total gate charge, 10.5 nF input capacitance, and 0.31 °C/W junction-to-case thermal resistance.
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Littelfuse IXFA180N10T2 technical specifications.
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 180A |
| Pulsed Drain Current | 450A |
| On-Resistance RDS(on) | 6 maxmΩ |
| Gate-Source Threshold Voltage | 2.0 to 4.0V |
| Gate-Source Voltage | ±20 continuousV |
| Power Dissipation | 480W |
| Operating Junction Temperature | -55 to 175°C |
| Total Gate Charge | 185 typnC |
| Input Capacitance | 10.5 typnF |
| Output Capacitance | 945 typpF |
| Reverse Transfer Capacitance | 100 typpF |
| Thermal Resistance Junction-to-Case | 0.31°C/W |
| Package | TO-263AA (IXFA) |
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
