N-channel Power MOSFET featuring a low on-resistance of 0.018 Ohms at 25°C and 100A continuous drain current. Designed for high-efficiency switching applications, this device offers a maximum drain-source voltage of 200V and a gate-source voltage range of ±20V. It boasts a low gate charge (Qg) for fast switching speeds and a robust avalanche rating for enhanced reliability.
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| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
