N-channel Power MOSFET featuring a low on-resistance of 0.018 Ohms at 100A and 250V drain-source voltage. Designed for high-efficiency power switching applications, this device offers a continuous drain current of 180A and a pulsed drain current of 720A. Its robust construction ensures reliable performance in demanding environments.
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| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |